A new ZnSe1-xTex scintillator: luminescence mechanismeRYZHIKOV, V. D; SILIN, V. I; STARZHINSKY, N. G et al.Nuclear tracks and radiation measurements (1993). 1993, Vol 21, Num 1, pp 53-54, issn 0969-8078Conference Paper

Detectors of UV and X-ray irradiation on the base of metal-zinc selenide contactMAKHNIY, Victor P; MEL'NYK, Volodymyr V; GORLEY, Peter N et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 60242J.1-60242J.7, issn 0277-786X, isbn 0-8194-6055-9, 1VolConference Paper

(Zn,Cd)Se/ZnSe quantum-well lasers : excitonic gain in an inhomogeneously broadened quasi-two-dimensional systemDING, J; HAGEROTT, M; ISHIHARA, T et al.Physical review. B, Condensed matter. 1993, Vol 47, Num 16, pp 10528-10542, issn 0163-1829Article

Optical gain of CdZnSe/ZnSe quantum well lasersAHN, D; YOO, T.-K; LEE, H. Y et al.Applied physics letters. 1991, Vol 59, Num 21, pp 2669-2671, issn 0003-6951Article

Luminescence of ZnSe(Te) crystals melt : grown from the charge enriched in seleniumRYZHIKOV, V. D; GAL'CHINETSKII, L. P; GALKIN, S. N et al.SPIE proceedings series. 1998, pp 302-304, isbn 0-8194-2808-6Conference Paper

DEFAUTS DE STRUCTURE DANS UN MONOCRISTAL DE SELENIURE DE ZINC.RIVAUD G; PAVIS B; LEMERCIER M et al.1974; J. MICR.; FR.; DA. 1974; VOL. 19; NO 2; PP. 113-118; H.T. 2; ABS. ANGL.; BIBL. 17 REF.Article

BIRECTIONAL TRANSMITTANCE DISTRIBUTION FUNCTION MEASUREMENTS ON ZNSEDERENIAK EL; BROD LG; HUBBS JE et al.1982; APPLIED OPTICS; ISSN 0003-6935; USA; DA. 1982; VOL. 21; NO 24; PP. 4421-4425; BIBL. 7 REF.Article

Blue light emission from ZnSe p-n junctionsNISHIZAWA, J; ITOH, K; OKUNO, Y et al.Journal of applied physics. 1985, Vol 57, Num 6, pp 2210-2216, issn 0021-8979Article

The electrooptical properties of ZnSe-ZnTe heterojunctionsFIRSZT, F; LOZYKOWSKI, H. J.Acta physica Polonica. A. 1983, Vol 64, Num 1, pp 9-19, issn 0587-4246Article

OXYDATION DE ZNSE A L'AIRSTEPANOVA ND; KALINKIN IP; SOKOLOV VA et al.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 6; PP. 1030-1034; BIBL. 11 REF.Article

ORIENTATION OF ZNSE CRYSTALS BY CHEMICAL ETCHING TECHNIQUE.OCZKOWSKI H; POPLAWSKI Z.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 23; NO 2; PP. 154-156; BIBL. 9 REF.Article

Pressure induced B3-B1 structural phase transformation and elastic properties of semi-magnetic semiconductors Zn_1-xM_xSe (M = Mn, Fe and Cd)VARSHNEY, Dinesh; SHARMA, U; KAURAV, N et al.Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 7, issn 0953-8984, 075204.1-075204.10Article

Photoluminescence studies of ZnSe starting materials and vapor grown bulk crystalsSU, Ching-Hua; FETH, S; LING JUN WANG et al.Journal of crystal growth. 2001, Vol 224, Num 1-2, pp 32-40, issn 0022-0248Article

Kinetics of photoconductivity in ZnSe crystals upon photoexcitation of deep centersBRUK, L. I; GORYA, O. S; KOROTKOV, V. A et al.Inorganic materials. 1995, Vol 31, Num 10, pp 1180-1182, issn 0020-1685Conference Paper

CIGS devices with ZIS, In₂S₃, and CdS buffer layersDELAHOY, A. E; AKHTAR, M; CAMBRIDGE, J et al.sans titre. 2002, pp 640-643, isbn 0-7803-7471-1, 4 p.Conference Paper

Spin-flip Raman scattering of holes bound to acceptors in p-type nitrogen-doped zinc selenideTOWNSLEY, C. M; SCHLICHTHERLE, B; WOLVERSON, D et al.Solid state communications. 1995, Vol 96, Num 7, pp 437-440, issn 0038-1098Article

Thermodynamic properties of Zn in Te-saturated ZnSe-ZnTe solid solutionsNASAR, A.Journal of alloys and compounds. 1994, Vol 209, pp 197-202, issn 0925-8388Article

Resonant Brillouin scattering from polaritons in ZnSe/GaAs epitaxial layersPERMOGOROV, S; KUZNETOV, P.Solid state communications. 1993, Vol 88, Num 9, pp 705-709, issn 0038-1098Article

Vertically aligned zinc selenide nanoribbon arrays : microstructure and field emissionLIJUAN ZHAO; QI PANG; YUAN CAI et al.Journal of physics. D, Applied physics (Print). 2007, Vol 40, Num 12, pp 3587-3591, issn 0022-3727, 5 p.Article

Magnetoresistance in Fe/ZnSe/Fe planar junctionsMOSCA, D. H; GEORGE, J. M; MAURICE, J. L et al.Journal of magnetism and magnetic materials. 2001, Vol 226-30, pp 917-919, issn 0304-8853, 1Conference Paper

Properties of photoluminescence from ZnTe-ZnSe superlatticesKUWABARA, H; FUJIYASU, H; AOKI, M et al.Japanese journal of applied physics. 1986, Vol 25, Num 9, pp L707-L709, issn 0021-4922, 2Article

Electrical properties of n-n ZnSe/GaAs heterojunctionsBAWOLEK, E. J; WESSELS, B. W.Thin solid films. 1985, Vol 131, Num 3-4, pp 173-183, issn 0040-6090Article

THERMOLUMINESCENCE MODEL WITH INTRA-PAIR METASTABLE STATEOCKOWSKI HL.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 74; NO 1; PP. 65-74; ABS. GER; BIBL. 9 REF.Article

NONSTOICHIOMETRY OF ZNSE AND CDSERAU H.1978; J. PHYS. CHEM. SOLIDS; GBR; DA. 1978; VOL. 39; NO 8; PP. 879-882; BIBL. 15 REF.Article

HIGH-EFFICIENCY BLUE LUMINESCENCE FROM MOCVD-GROWN ZNSE AT ROOM TEMPERATUREWIGHT DR; WRIGHT PJ; COCKAYNE B et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 14; PP. 593-595; BIBL. 6 REF.Article